MEMORIA KINGSTON 4GB DDR4 2666MHZ CL19 1.2V KVR26N19S6/4

Especificaciones

CL(IDD): 19 cycles
Row Cycle Time (tRCmin): 45.75ns(min.)
Refresh to Active/Refresh Command Time (tRFCmin): 350ns(min.)
Row Active Time (tRASmin): 32ns(min.)
Maximum Operating Power: TBD W*
UL Rating: 94 V - 0
Operating Temperature: 0 ºC to +85 ºC
Storage Temperature: -55 ºC to +100 ºC
*Power will vary depending on the SDRAM used.

Features

• Power Supply: VDD = 1.2V Typical
• VDDQ = 1.2V Typical
• VPP = 2.5V Typical
• VDDSPD = 2.2V to 3.6V
• Nominal and dynamic on-die termination (ODT) for data, strobe, and mask signals
• Low-power auto self refresh (LPASR)
• Data bus inversion (DBI) for data bus
• On-die VREFDQ generation and calibration
• Single-rank
• On-board I2 serial presence-detect (SPD) EEPROM
• 8 internal banks; 2 groups of 4 banks each
• Fixed burst chop (BC) of 4 and burst length (BL) of 8 via the mode register set (MRS)
• Selectable BC4 or BL8 on-the-fly (OTF)
• Fly-by topology
• Terminated control command and address bus
• PCB: Height 1.23” (31.25mm)
• RoHS Compliant and Halogen-Free
- Garantía por escrito de 12 meses - (9526)0(IN) - KVR26N19S6/4-in